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 NPN Silicon RF Transistors
BF 840 BF 841
q q q
Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion Low output conductance
Type BF 840 BF 841
Marking NC ND
Ordering Code Q62702-F1240 Q62702-F1287
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA 25 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA
Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg
Values 40 40 4 25 2 280 150 - 65 ... + 150
Unit V
mA mW C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
07.94
BF 840 BF 841
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Emitter-base breakdown voltage IE = 10 A, IB = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain, IC = 1 mA, VCE = 10 V BF 840 BF 841 Base-emitter voltage IC = 1 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 1 mA, VCE = 10 V, f = 100 kHz RS = 200 Output conductance IC = 1 mA, VCE = 10 V, f = 0.5 MHz fT Ccb F - - - 380 0.3 1.7 - - - MHz pF dB V(BR) CE0 V(BR) EB0 ICB0 hFE 65 35 VBE - - - 0.7 220 125 - V 40 4 - - - - - - 100 nA - V Values typ. max. Unit
g22e
-
4
-
S
Semiconductor Group
2


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